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Typical Characteristics T C = 25°C unless otherwise noted
2000
1000
10 μ s
100 μ s
100
STARTING T J = 25 o C
100
1ms
OPERATION IN THIS
STARTING T J = 150 o C
10
AREA MAY BE
LIMITED BY r DS(ON)
10m s
10
1
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
DC
1
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1 ]
1
10
100
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
160
V GS = 20V
V GS = 10V
V DD = 15V
120
120
V GS = 6V
V GS = 5V
80
40
T J = 175 o C
T J = 25 o C
80
40
0
T J = -55 o C
0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
3.0
3.5
4.0 4.5 5.0 5.5
6
0
0.5
1.0
1.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 6V
2.0
5
1.5
4
1.0
V GS = 10V
3
0.5
V GS = 10V, I D =80A
0
2 0
40
6 0
80
-80
-40
0 40 80 120 160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 200 2 Fairchild Semiconductor Corporation
FDP038AN06A0 / FDI038AN06A0 Rev. C1
4
www.fairchildsemi.com
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